SI7840BDP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Number of Terminations :

5

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

8.5mOhm

Width :

5.89mm

JESD-609 Code :

e3

Vgs (Max) :

±20V

Additional Feature :

FAST SWITCHING

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Fall Time (Typ) :

14 ns

Continuous Drain Current (ID) :

11A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Weight :

506.605978mg

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

FET Type :

N-Channel

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

50A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 16.5A, 10V

Turn-Off Delay Time :

39 ns

Turn On Delay Time :

17 ns

Avalanche Energy Rating (Eas) :

20 mJ

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Channels :

1

Power Dissipation-Max :

1.8W Ta

Pin Count :

8

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-XDSO-C5

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Height :

1.04mm

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Length :

4.9mm

Terminal Form :

C BEND

Rise Time :

14ns

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Published :

2009

DS Breakdown Voltage-Min :

30V