SI7840BDP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Length :

4.9mm

JESD-30 Code :

R-XDSO-C5

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

11A

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 16.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Turn-Off Delay Time :

39 ns

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

20 mJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

14 ns

Mounting Type :

Surface Mount

Package / Case :

PowerPAK® SO-8

Terminal Form :

C BEND

Radiation Hardening :

No

Pin Count :

8

Vgs (Max) :

±20V

Width :

5.89mm

Number of Terminations :

5

Weight :

506.605978mg

Power Dissipation-Max :

1.8W Ta

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

FAST SWITCHING

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Resistance :

8.5mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.04mm

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Mount :

Surface Mount

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Rise Time :

14ns

Turn On Delay Time :

17 ns

Number of Elements :

1

Published :

2009

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

50A