SI7810DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Rise Time :

15ns

REACH SVHC :

Unknown

Length :

3.05mm

Transistor Element Material :

SILICON

Pin Count :

8

Height :

1.04mm

Case Connection :

DRAIN

Fall Time (Typ) :

15 ns

Mount :

Surface Mount

Number of Terminations :

5

Power Dissipation-Max :

1.5W Ta

Turn-Off Delay Time :

20 ns

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Lead Free :

Lead Free

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Form :

C BEND

Published :

2008

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

JESD-30 Code :

R-XDSO-C5

Resistance :

62mOhm

Continuous Drain Current (ID) :

3.4A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

FET Type :

N-Channel

Package / Case :

PowerPAK® 1212-8

Pulsed Drain Current-Max (IDM) :

20A

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Width :

3.05mm

Number of Elements :

1

JESD-609 Code :

e3

Nominal Vgs :

4.5 V

Power Dissipation :

1.5W

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

62m Ω @ 5.4A, 10V

Turn On Delay Time :

10 ns