SI7812DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

15 ns

Height :

1.04mm

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Mount :

Surface Mount

Rise Time :

20ns

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

37m Ω @ 7.2A, 10V

Drain-source On Resistance-Max :

0.037Ohm

JESD-30 Code :

S-XDSO-C5

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

3.05mm

JESD-609 Code :

e3

Published :

2004

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

Unknown

Package / Case :

PowerPAK® 1212-8

Transistor Application :

SWITCHING

Length :

3.05mm

Pulsed Drain Current-Max (IDM) :

25A

Mounting Type :

Surface Mount

Series :

TrenchFET®

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Number of Channels :

1

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

7.2A

Pin Count :

8

Pbfree Code :

yes

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

35 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

75V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 35V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Number of Elements :

1

Terminal Form :

C BEND

Power Dissipation-Max :

3.8W Ta 52W Tc

Continuous Drain Current (ID) :

16A

Power Dissipation :

3.8W

Threshold Voltage :

2.3V

Factory Lead Time :

14 Weeks