SI7810DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.062Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PDSO-C5

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation-Max :

1.5W Ta

Terminal Form :

C BEND

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rise Time :

15ns

Vgs (Max) :

±20V

Power Dissipation :

1.5W

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

20A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Element Configuration :

Single

Continuous Drain Current (ID) :

3.4A

Terminal Position :

Dual

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Number of Terminations :

5

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® 1212-8

Turn-Off Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

62m Ω @ 5.4A, 10V

Fall Time (Typ) :

15 ns

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Pin Count :

8

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V