SI7804DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Drain to Source Resistance :

18.5mOhm

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

12 ns

Vgs (Max) :

±20V

Width :

3.05mm

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

10A

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.5W Ta

Turn-Off Delay Time :

32 ns

Rds On Max :

18.5 mΩ

FET Type :

N-Channel

Turn On Delay Time :

8 ns

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Length :

3.05mm

Number of Channels :

1

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Radiation Hardening :

No

Supplier Device Package :

PowerPAK® 1212-8

Rise Time :

12ns

Height :

1.04mm

Published :

2017

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Resistance :

18.5mOhm

Max Operating Temperature :

150°C

Package / Case :

PowerPAK® 1212-8

Rds On (Max) @ Id, Vgs :

18.5mOhm @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta