SI7804DN-T1-E3
- Mfr.Part #
- SI7804DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5A PPAK1212-8
- Stock
- 1,430
- In Stock :
- 1,430
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- Drain to Source Resistance :
- 18.5mOhm
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 14 Weeks
- Series :
- TrenchFET®
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- PowerPAK® 1212-8
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Rise Time :
- 12ns
- FET Type :
- N-Channel
- Width :
- 3.05mm
- Published :
- 2017
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 12 ns
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Length :
- 3.05mm
- Turn-Off Delay Time :
- 32 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Continuous Drain Current (ID) :
- 10A
- Element Configuration :
- Single
- Power Dissipation-Max :
- 1.5W Ta
- Height :
- 1.04mm
- Supplier Device Package :
- PowerPAK® 1212-8
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 18.5mOhm @ 10A, 10V
- Resistance :
- 18.5mOhm
- Turn On Delay Time :
- 8 ns
- Rds On Max :
- 18.5 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Datasheets
- SI7804DN-T1-E3
N-Channel Tape & Reel (TR) 18.5mOhm @ 10A, 10V ±20V 13nC @ 5V 30V PowerPAK® 1212-8
SI7804DN-T1-E3 Overview
This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.MOSFETs have 18.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI7804DN-T1-E3 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 32 ns
single MOSFETs transistor is 18.5mOhm
a 30V drain to source voltage (Vdss)
SI7804DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7804DN-T1-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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