SI7842DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

6.3A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Pin Count :

8

Base Part Number :

SI7842

Resistance :

22mOhm

Pbfree Code :

yes

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Number of Terminations :

6

Max Power Dissipation :

1.4W

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Pulsed Drain Current-Max (IDM) :

30A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Series :

LITTLE FOOT®

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

8 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® SO-8 Dual

JESD-30 Code :

R-XDSO-C6

REACH SVHC :

Unknown

Fall Time (Typ) :

10 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Nominal Vgs :

800 mV

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Turn-Off Delay Time :

21 ns

Power Dissipation :

1.4W

Rise Time :

10ns

Terminal Form :

C BEND

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Packaging :

Tape and Reel (TR)