SI7196DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Series :

WFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3V

Turn-Off Delay Time :

22 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

21 ns

Vgs (Max) :

±20V

Package / Case :

PowerPAK® SO-8

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1577pF @ 15V

Length :

4.9mm

Published :

2005

Width :

5.89mm

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

12 ns

Avalanche Energy Rating (Eas) :

20 mJ

Terminal Form :

C BEND

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Height :

1.04mm

Rds On (Max) @ Id, Vgs :

11m Ω @ 12A, 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

60A

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Rise Time :

12ns

Number of Terminations :

5

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

JESD-30 Code :

R-PDSO-C5

Power Dissipation-Max :

5W Ta 41.6W Tc

Power Dissipation :

5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Transistor Application :

SWITCHING

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

50A

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Weight :

506.605978mg

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)