SI7104DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

35A

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Package / Case :

PowerPAK® 1212-8

Published :

2015

Rise Time :

11ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 52W Tc

Element Configuration :

Single

Fall Time (Typ) :

10 ns

Drain-source On Resistance-Max :

0.0037Ohm

Turn On Delay Time :

12 ns

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

12V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

JESD-30 Code :

S-XDSO-C5

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

C BEND

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Gate to Source Voltage (Vgs) :

12V

Width :

3.05mm

Power Dissipation :

3.8W

Turn-Off Delay Time :

36 ns

Terminal Position :

Dual

Length :

3.05mm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 6V

Case Connection :

DRAIN

Height :

1.04mm

Number of Channels :

1

Number of Elements :

1

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 26.1A, 4.5V

Series :

TrenchFET®

Continuous Drain Current (ID) :

26.1A

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Pin Count :

8

JESD-609 Code :

e3

Number of Terminations :

5

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pulsed Drain Current-Max (IDM) :

60A

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)