SI7106DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Terminal Position :

Dual

Turn On Delay Time :

25 ns

Terminal Form :

C BEND

Package / Case :

PowerPAK® 1212-8

Number of Channels :

1

Published :

2009

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

JESD-30 Code :

S-XDSO-C5

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 19.5A, 4.5V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±12V

Power Dissipation-Max :

1.5W Ta

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Fall Time (Typ) :

15 ns

Width :

3.3mm

Transistor Element Material :

SILICON

Dual Supply Voltage :

20V

Length :

3.3mm

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Resistance :

6.2mOhm

Pbfree Code :

yes

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

50 ns

REACH SVHC :

Unknown

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

60A

Terminal Finish :

Matte Tin (Sn)

Height :

1.04mm

Continuous Drain Current (ID) :

19.5A

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Type :

N-Channel

Power Dissipation :

1.5W

Avalanche Energy Rating (Eas) :

45 mJ

Radiation Hardening :

No

ECCN Code :

EAR99