SI7107DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

10.8m Ω @ 15.3A, 4.5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

Terminal Position :

Dual

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

20V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

40A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Surface Mount :

yes

Mounting Type :

Surface Mount

JESD-30 Code :

S-XDSO-C5

Number of Terminations :

5

Power Dissipation-Max :

1.5W Ta

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Package / Case :

PowerPAK® 1212-8

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 450μA

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

9.8A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Published :

2016

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0108ohm