SI7102DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 6V

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2013

Terminal Finish :

Matte Tin (Sn)

Resistance :

3.8mOhm

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

35A

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 8V

Factory Lead Time :

15 Weeks

Mount :

Surface Mount

Rise Time :

125ns

Number of Channels :

1

Turn-Off Delay Time :

53 ns

REACH SVHC :

Unknown

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Pin Count :

8

JESD-609 Code :

e3

JESD-30 Code :

S-XDSO-C5

Vgs (Max) :

±8V

Package / Case :

PowerPAK® 1212-8

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 15A, 4.5V

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

12V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Width :

3.3mm

FET Type :

N-Channel

Turn On Delay Time :

27 ns

Operating Temperature :

-50°C~150°C TJ

Power Dissipation-Max :

3.8W Ta 52W Tc

Threshold Voltage :

400mV

Height :

1.04mm

Length :

3.3mm

Power Dissipation :

3.8W

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Number of Terminations :

5

Nominal Vgs :

400 mV

Series :

TrenchFET®

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Gate to Source Voltage (Vgs) :

8V

Drain Current-Max (Abs) (ID) :

25A

Fall Time (Typ) :

12 ns