SI7106DN-T1-E3

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Mfr.Part #
SI7106DN-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET N-CH 20V 12.5A PPAK1212-8
Stock
67,322
In Stock :
67,322

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
20V
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
1.5V
Continuous Drain Current (ID) :
19.5A
Series :
TrenchFET®
REACH SVHC :
Unknown
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
60A
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
S-XDSO-C5
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Length :
3.3mm
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Turn-Off Delay Time :
50 ns
Power Dissipation-Max :
1.5W Ta
Terminal Form :
C BEND
Terminal Position :
Dual
Height :
1.04mm
Mounting Type :
Surface Mount
Number of Channels :
1
Vgs (Max) :
±12V
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
12V
Turn On Delay Time :
25 ns
Element Configuration :
Single
Case Connection :
DRAIN
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
6.2m Ω @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C :
12.5A Ta
Avalanche Energy Rating (Eas) :
45 mJ
Mount :
Surface Mount
Width :
3.3mm
Packaging :
Tape and Reel (TR)
Factory Lead Time :
14 Weeks
Fall Time (Typ) :
15 ns
Rise Time :
15ns
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
8
Package / Case :
PowerPAK® 1212-8
Pin Count :
8
Time@Peak Reflow Temperature-Max (s) :
30
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Resistance :
6.2mOhm
Power Dissipation :
1.5W
Pbfree Code :
yes
Published :
2016
Number of Terminations :
5
Datasheets
SI7106DN-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7106DN-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1, Number of Pins:8, Package / Case:PowerPAK® 1212-8, Number of Terminations:5, SI7106DN-T1-E3 pinout, SI7106DN-T1-E3 datasheet PDF, SI7106DN-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7106DN-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7106DN-T1-E3


N-Channel Tape & Reel (TR) 6.2m Ω @ 19.5A, 4.5V ±12V 27nC @ 4.5V PowerPAK® 1212-8

SI7106DN-T1-E3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 19.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.5V threshold voltage. By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

SI7106DN-T1-E3 Features


the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 19.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 60A.
a threshold voltage of 1.5V


SI7106DN-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7106DN-T1-E3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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