SI7108DN-T1-E3
- Mfr.Part #
- SI7108DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 14A PPAK1212-8
- Stock
- 13,533
- In Stock :
- 13,533
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 10ns
- Gate to Source Voltage (Vgs) :
- 16V
- FET Type :
- N-Channel
- JESD-30 Code :
- S-XDSO-C5
- Transistor Element Material :
- SILICON
- Width :
- 3.05mm
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Package / Case :
- PowerPAK® 1212-8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 60A
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±16V
- Avalanche Energy Rating (Eas) :
- 24 mJ
- Published :
- 2011
- Turn-Off Delay Time :
- 60 ns
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Resistance :
- 4.9mOhm
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 22A, 10V
- Series :
- TrenchFET®
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Number of Terminations :
- 5
- Drain to Source Breakdown Voltage :
- 20V
- Power Dissipation-Max :
- 1.5W Ta
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 8
- Nominal Vgs :
- 2 V
- Pbfree Code :
- yes
- Terminal Form :
- C BEND
- Length :
- 3.05mm
- Case Connection :
- DRAIN
- Height :
- 1.04mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.5W
- Turn On Delay Time :
- 10 ns
- Fall Time (Typ) :
- 10 ns
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Factory Lead Time :
- 14 Weeks
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 22A
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- SI7108DN-T1-E3
N-Channel Tape & Reel (TR) 4.9m Ω @ 22A, 10V ±16V 30nC @ 4.5V PowerPAK® 1212-8
SI7108DN-T1-E3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 24 mJ.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7108DN-T1-E3 Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 60A.
SI7108DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7108DN-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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