SI7102DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Package / Case :

PowerPAK® 1212-8

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 15A, 4.5V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 8V

Transistor Element Material :

SILICON

Power Dissipation :

52mW

Drain Current-Max (Abs) (ID) :

35A

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

60A

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Mounting Type :

Surface Mount

Published :

2014

Number of Channels :

1

Turn On Delay Time :

27 ns

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Vgs (Max) :

±8V

Number of Terminations :

5

Terminal Form :

C BEND

Radiation Hardening :

No

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.05mm

Pbfree Code :

yes

Continuous Drain Current (ID) :

25A

ECCN Code :

EAR99

JESD-30 Code :

S-XDSO-C5

Number of Pins :

8

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

3.8W Ta 52W Tc

Operating Temperature :

-50°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

1

Fall Time (Typ) :

12 ns

REACH SVHC :

No SVHC

Rise Time :

125ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Height :

1.04mm

Width :

3.05mm

Drain to Source Voltage (Vdss) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 6V

Transistor Application :

SWITCHING

Pin Count :

8

Turn-Off Delay Time :

53 ns