SI7110DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

36 ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Height :

1.04mm

Number of Channels :

1

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Width :

3.05mm

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.5W Ta

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Radiation Hardening :

No

Terminal Position :

Dual

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

13.5A Ta

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0053Ohm

Package / Case :

PowerPAK® 1212-8

Pin Count :

8

Mount :

Surface Mount

Number of Terminations :

5

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

2.5V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rise Time :

10ns

Length :

3.05mm

JESD-30 Code :

S-XDSO-C5

Published :

2013

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 21.1A, 10V

Continuous Drain Current (ID) :

21.1A

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

60A

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns