SI7108DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Turn On Delay Time :

10 ns

Power Dissipation-Max :

1.5W Ta

Transistor Element Material :

SILICON

Turn-Off Delay Time :

60 ns

Published :

2009

Avalanche Energy Rating (Eas) :

24 mJ

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.0049Ohm

Length :

3.05mm

Power Dissipation :

1.5W

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

10 ns

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Terminal Position :

Dual

Threshold Voltage :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Additional Feature :

ULTRA-LOW RESISTANCE

Terminal Form :

C BEND

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs (Max) :

±16V

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 22A, 10V

Package / Case :

PowerPAK® 1212-8

Width :

3.05mm

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

5

JESD-30 Code :

S-XDSO-C5

Mounting Type :

Surface Mount

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

60A

ECCN Code :

EAR99

Series :

TrenchFET®

Number of Channels :

1

Continuous Drain Current (ID) :

22A

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

16V

Height :

1.04mm

Pin Count :

8

Mount :

Surface Mount

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No