SI7107DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-15.3A

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Power Dissipation-Max :

1.5W Ta

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

PowerPAK® 1212-8

Series :

TrenchFET®

Threshold Voltage :

-1V

Number of Terminations :

5

Transistor Application :

SWITCHING

Height :

1.0668mm

Number of Pins :

8

Width :

3.1496mm

Turn-Off Delay Time :

270 ns

Mount :

Surface Mount

Rise Time :

55ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

10.8m Ω @ 15.3A, 4.5V

Published :

2009

Terminal Position :

Dual

Fall Time (Typ) :

55 ns

Resistance :

10.6mOhm

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

S-XDSO-C5

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1V @ 450μA

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Matte Tin (Sn)

Length :

3.1496mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Terminal Form :

C BEND

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Pin Count :

8

REACH SVHC :

Unknown

ECCN Code :

EAR99

Lead Free :

Lead Free

Turn On Delay Time :

27 ns

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

8V

Pulsed Drain Current-Max (IDM) :

40A