SI7101DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Series :

TrenchFET®

Terminal Position :

Dual

Transistor Element Material :

SILICON

Height :

1.12mm

Drain-source On Resistance-Max :

0.0072Ohm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 15A, 10V

Rise Time :

10ns

Gate to Source Voltage (Vgs) :

25V

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Turn-Off Delay Time :

38 ns

Drain Current-Max (Abs) (ID) :

35A

FET Type :

P-Channel

Power Dissipation-Max :

3.7W Ta 52W Tc

Package / Case :

PowerPAK® 1212-8

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

3595pF @ 15V

Drain to Source Breakdown Voltage :

-30V

Radiation Hardening :

No

Published :

2013

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Power Dissipation :

3.7W

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn On Delay Time :

12 ns

Factory Lead Time :

14 Weeks

Threshold Voltage :

-1.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Avalanche Energy Rating (Eas) :

20 mJ

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Fall Time (Typ) :

8 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

S-PDSO-C5

Continuous Drain Current (ID) :

-16.9A

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Terminal Form :

C BEND

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

102nC @ 10V