SI7100DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Mounting Type :

Surface Mount

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

3.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Terminal Finish :

MATTE TIN

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

0.0035Ohm

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Terminations :

5

Radiation Hardening :

No

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Package / Case :

PowerPAK® 1212-8

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 8V

Case Connection :

DRAIN

Power Dissipation-Max :

3.8W Ta 52W Tc

Element Configuration :

Single

Continuous Drain Current (ID) :

26.1A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

60A

Input Capacitance (Ciss) (Max) @ Vds :

3810pF @ 4V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 15A, 4.5V

Drain to Source Breakdown Voltage :

8V

Operating Temperature :

-50°C~150°C TJ

Pin Count :

8

Transistor Element Material :

SILICON

JESD-30 Code :

S-XDSO-C5

Pbfree Code :

yes

Terminal Form :

C BEND