SI7104DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

PowerPAK® 1212-8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Form :

C BEND

Published :

2015

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Number of Pins :

8

Series :

TrenchFET®

Number of Channels :

1

JESD-609 Code :

e3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Drain to Source Breakdown Voltage :

12V

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 52W Tc

Pin Count :

8

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

35A

Continuous Drain Current (ID) :

26.1A

JESD-30 Code :

S-XDSO-C5

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Position :

Dual

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 6V

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 26.1A, 4.5V

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Terminations :

5

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

60A

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

0.0037Ohm

Pbfree Code :

yes

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

35A Tc