SI7196DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Terminations :

5

Turn-Off Delay Time :

22 ns

Height :

1.04mm

Number of Channels :

1

Avalanche Energy Rating (Eas) :

20 mJ

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

8

JESD-30 Code :

R-PDSO-C5

Input Capacitance (Ciss) (Max) @ Vds :

1577pF @ 15V

Power Dissipation-Max :

5W Ta 41.6W Tc

Terminal Finish :

MATTE TIN

Published :

2016

Width :

5.89mm

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Weight :

506.605978mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

15.8A

Terminal Position :

Dual

Vgs (Max) :

±20V

Fall Time (Typ) :

12 ns

Series :

WFET®

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

50A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs :

11m Ω @ 12A, 10V

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Length :

4.9mm

Pbfree Code :

yes

Turn On Delay Time :

21 ns

Terminal Form :

C BEND

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

12ns

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Mount :

Surface Mount

Radiation Hardening :

No

Number of Elements :

1

JESD-609 Code :

e3