SI7192DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Termination :

SMD/SMT

Vgs (Max) :

±20V

Number of Channels :

1

Turn-Off Delay Time :

86 ns

Power Dissipation :

6.25W

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 15V

JESD-30 Code :

R-XDSO-C5

Fall Time (Typ) :

32 ns

Nominal Vgs :

1 V

Mounting Type :

Surface Mount

Length :

4.9mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Dual Supply Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

5.89mm

Rise Time :

26ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

60A

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 20A, 10V

Turn On Delay Time :

41 ns

REACH SVHC :

Unknown

Peak Reflow Temperature (Cel) :

260

Resistance :

1.9mOhm

Transistor Application :

SWITCHING

Series :

TrenchFET®

Case Connection :

DRAIN

JESD-609 Code :

e3

Mount :

Surface Mount

Pbfree Code :

yes

Height :

1.04mm

Packaging :

Tape and Reel (TR)

Weight :

506.605978mg

Terminal Form :

C BEND

Terminal Position :

Dual

Number of Terminations :

5

ECCN Code :

EAR99

Package / Case :

PowerPAK® SO-8

Published :

2013

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

42A

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

8

Number of Pins :

8

Power Dissipation-Max :

6.25W Ta 104W Tc