SI7186DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Number of Pins :

8

Number of Terminations :

5

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 10A, 10V

JESD-30 Code :

R-XDSO-C5

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Terminal Form :

C BEND

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Termination :

SMD/SMT

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

5.2W Ta 64W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

32A

Package / Case :

PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Turn On Delay Time :

25 ns

Resistance :

12.5mOhm

Radiation Hardening :

No

Turn-Off Delay Time :

32 ns

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns

Element Configuration :

Single

Vgs (Max) :

±20V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 40V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

45 mJ

Drain to Source Breakdown Voltage :

80V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation :

5.2W

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Case Connection :

DRAIN

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

60A

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Dual Supply Voltage :

80V

Continuous Drain Current (ID) :

14.5A