SI7172DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

30A

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

5.4W

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Series :

TrenchFET®

Published :

2017

Rise Time :

11ns

Drain Current-Max (Abs) (ID) :

5.9A

Lead Free :

Lead Free

JESD-30 Code :

R-XDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

506.605978mg

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Contact Plating :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

15 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Radiation Hardening :

No

Power Dissipation-Max :

5.4W Ta 96W Tc

Fall Time (Typ) :

9 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Width :

5.89mm

Terminal Position :

Dual

Height :

1.04mm

Mount :

Surface Mount

Length :

4.9mm

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND

Turn-Off Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 100V

JESD-609 Code :

e3

Factory Lead Time :

14 Weeks

Pin Count :

8

Threshold Voltage :

4V

Resistance :

70mOhm

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

200V

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Mounting Type :

Surface Mount

Package / Case :

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs :

70m Ω @ 5.9A, 10V

Number of Terminations :

5

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

25A

Vgs(th) (Max) @ Id :

4V @ 250µA