SI7170DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Radiation Hardening :

No

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

40A

Vgs (Max) :

±20V

Fall Time (Typ) :

8 ns

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

Number of Pins :

8

Contact Plating :

Tin

Drain-source On Resistance-Max :

0.0034Ohm

Published :

2015

Weight :

506.605978mg

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Width :

5.89mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4355pF @ 15V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

70A

Turn-Off Delay Time :

35 ns

Pin Count :

8

Lead Free :

Lead Free

Length :

4.9mm

Package / Case :

PowerPAK® SO-8

Additional Feature :

AVALANCHE RATED

Threshold Voltage :

2.6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XDSO-C5

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Rise Time :

10ns

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 15A, 10V

Power Dissipation-Max :

5W Ta 48W Tc

Case Connection :

DRAIN

Element Configuration :

Single

REACH SVHC :

Unknown

Terminal Form :

C BEND

Height :

1.04mm

Number of Terminations :

5

FET Type :

N-Channel

Turn On Delay Time :

15 ns

JESD-609 Code :

e3