SI7164DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Length :

4.9mm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

60A

Resistance :

6.25MOhm

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation :

6.25W

Fall Time (Typ) :

11 ns

Transistor Application :

SWITCHING

Terminal Form :

C BEND

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Radiation Hardening :

No

Width :

5.89mm

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

23.5A

Power Dissipation-Max :

6.25W Ta 104W Tc

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6.25m Ω @ 10A, 10V

Height :

1.04mm

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

2.5V

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 30V

Weight :

506.605978mg

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Series :

TrenchFET®

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Number of Elements :

1

Package / Case :

PowerPAK® SO-8

Number of Pins :

8

Rise Time :

11ns

Pbfree Code :

yes

JESD-30 Code :

R-XDSO-C5

FET Type :

N-Channel

Nominal Vgs :

2.5 V

Terminal Position :

Dual

Turn On Delay Time :

23 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

5

Contact Plating :

Tin

Published :

2013

Turn-Off Delay Time :

40 ns