SI7160DP-T1-E3
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- Mfr.Part #
- SI7160DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A PPAK SO-8
- Stock
- 43,971
- In Stock ：
- 43,971
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 60A
- JESD-609 Code :
- e3
- Pin Count :
- 8
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 5W Ta 27.7W Tc
- Published :
- 2012
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±16V
- Rise Time :
- 115ns
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 21 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2970pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Turn On Delay Time :
- 29 ns
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Package / Case :
- PowerPAK® SO-8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 43 ns
- Terminal Form :
- C BEND
- JESD-30 Code :
- R-PDSO-C5
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 17.8A
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Mount :
- Surface Mount
- Series :
- TrenchFET®
- Resistance :
- 8.7mOhm
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 8.7m Ω @ 15A, 10V
- Power Dissipation :
- 5W
- Gate to Source Voltage (Vgs) :
- 16V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 5
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- ECCN Code :
- EAR99
- Datasheets
- SI7160DP-T1-E3
N-Channel Tape & Reel (TR) 8.7m Ω @ 15A, 10V ±16V 2970pF @ 15V 66nC @ 10V PowerPAK® SO-8
SI7160DP-T1-E3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2970pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 29 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7160DP-T1-E3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 17.8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 60A.
SI7160DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7160DP-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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