SI7159DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Factory Lead Time :

21 Weeks

Power Dissipation-Max :

5.4W Ta 83W Tc

Published :

2013

Continuous Drain Current (ID) :

29A

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

60A

Number of Terminations :

5

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

5170pF @ 15V

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

11 ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

20.7A

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-25V

JESD-30 Code :

R-XDSO-C5

Drain-source On Resistance-Max :

0.007Ohm

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Series :

TrenchFET®

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±25V

Number of Pins :

8

Avalanche Energy Rating (Eas) :

20 mJ

Rise Time :

14ns

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Gate to Source Voltage (Vgs) :

16V

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)