SI7157DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rise Time :

14ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

55 ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Transistor Element Material :

SILICON

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

300A

Package / Case :

PowerPAK® SO-8

Series :

TrenchFET®

Turn On Delay Time :

20 ns

Turn-Off Delay Time :

220 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-60A

Terminal Form :

C BEND

FET Type :

P-Channel

Weight :

506.605978mg

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

6.25W

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

20V

Number of Channels :

1

Element Configuration :

Single

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

625nC @ 10V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

22000pF @ 10V

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

6.25W Ta 104W Tc

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-C5

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Published :

2014

Vgs (Max) :

±12V

Threshold Voltage :

-1.4V