SI7156DP-T1-GE3

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Mfr.Part #
SI7156DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 40V 50A PPAK SO-8
Stock
127
In Stock :
127

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Published :
2013
Series :
TrenchFET®
FET Type :
N-Channel
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
5.4W Ta 83W Tc
Resistance :
3.5mOhm
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Min Operating Temperature :
-55°C
Rds On Max :
3.5 mΩ
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
PowerPAK® SO-8
Input Capacitance :
6.9nF
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
40V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
3.5mOhm
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Element Configuration :
Single
Weight :
506.605978mg
Vgs(th) (Max) @ Id :
3V @ 250µA
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
3.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 20V
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Continuous Drain Current (ID) :
50A
Package / Case :
PowerPAK® SO-8
Datasheets
SI7156DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7156DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:PowerPAK® SO-8, SI7156DP-T1-GE3 pinout, SI7156DP-T1-GE3 datasheet PDF, SI7156DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7156DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7156DP-T1-GE3


N-Channel Tape & Reel (TR) 3.5mOhm @ 20A, 10V ±20V 6900pF @ 20V 155nC @ 10V 40V PowerPAK® SO-8

SI7156DP-T1-GE3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6900pF @ 20V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.MOSFETs have 3.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI7156DP-T1-GE3 Features


a continuous drain current (ID) of 50A
single MOSFETs transistor is 3.5mOhm
a 40V drain to source voltage (Vdss)


SI7156DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7156DP-T1-GE3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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