SI7156DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Power Dissipation :

5.4W

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Mount :

Surface Mount

Turn-Off Delay Time :

56 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

3.5mOhm @ 20A, 10V

Element Configuration :

Single

Input Capacitance :

6.9nF

Drain to Source Breakdown Voltage :

40V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

25 ns

Rds On Max :

3.5 mΩ

Continuous Drain Current (ID) :

29A

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 20V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Series :

TrenchFET®

Power Dissipation-Max :

5.4W Ta 83W Tc

Package / Case :

PowerPAK® SO-8

Supplier Device Package :

PowerPAK® SO-8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Published :

2013

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Rise Time :

32ns

Drain to Source Resistance :

3.5mOhm