SI7149DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.15mm

Published :

2013

Threshold Voltage :

-1.2V

Number of Terminations :

5

Height :

1.04mm

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

20 mJ

Mount :

Surface Mount

JESD-30 Code :

R-XDSO-C5

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

147nC @ 10V

Lead Free :

Lead Free

Fall Time (Typ) :

110 ns

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 15A, 10V

Factory Lead Time :

14 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

4590pF @ 15V

Continuous Drain Current (ID) :

23.7A

Number of Pins :

8

Number of Channels :

1

Rise Time :

150ns

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Turn-Off Delay Time :

230 ns

Number of Elements :

1

Turn On Delay Time :

100 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Series :

TrenchFET®

Terminal Form :

C BEND

Pulsed Drain Current-Max (IDM) :

70A

REACH SVHC :

Unknown

Drain Current-Max (Abs) (ID) :

50A

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Power Dissipation :

69W

FET Type :

P-Channel

Power Dissipation-Max :

69W Tc

Resistance :

5.2mOhm

Case Connection :

DRAIN

Radiation Hardening :

No

Package / Case :

PowerPAK® SO-8

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Length :

5.15mm

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99