SI7149ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±25V

Number of Channels :

1

Threshold Voltage :

-2.5V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0052Ohm

Contact Plating :

Tin

Number of Terminations :

5

Terminal Position :

Dual

Terminal Form :

C BEND

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Fall Time (Typ) :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.12mm

JESD-30 Code :

R-PDSO-C5

Power Dissipation :

48W

Input Capacitance (Ciss) (Max) @ Vds :

5125pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Number of Elements :

1

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Package / Case :

PowerPAK® SO-8

Pulsed Drain Current-Max (IDM) :

300A

Continuous Drain Current (ID) :

-50A

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Power Dissipation-Max :

5W Ta 48W Tc

Transistor Element Material :

SILICON

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 15A, 10V

JESD-609 Code :

e3

Published :

2014

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Rise Time :

12ns

Turn-Off Delay Time :

58 ns

Drain to Source Breakdown Voltage :

-30V

Gate to Source Voltage (Vgs) :

25V