SI7145DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.17mm

Fall Time (Typ) :

43 ns

Factory Lead Time :

14 Weeks

Max Junction Temperature (Tj) :

150°C

Length :

4.9mm

Pin Count :

8

Width :

5.89mm

Turn On Delay Time :

27 ns

Published :

2013

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Threshold Voltage :

-2.3V

Packaging :

Tape and Reel (TR)

Nominal Vgs :

-2.3 V

JESD-30 Code :

R-XDSO-C5

Terminal Position :

Dual

Contact Plating :

Tin

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Radiation Hardening :

No

Mount :

Surface Mount

Power Dissipation-Max :

6.25W Ta 104W Tc

Mounting Type :

Surface Mount

Weight :

506.605978mg

Number of Channels :

1

Power Dissipation :

6.25W

Drain Current-Max (Abs) (ID) :

36.5A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

130 ns

Continuous Drain Current (ID) :

-60A

Resistance :

2.6MOhm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Case Connection :

DRAIN

Package / Case :

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds :

15660pF @ 15V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V

Rise Time :

110ns

Lead Free :

Lead Free

Number of Elements :

1

Terminal Form :

C BEND

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

413nC @ 10V

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Manufacturer Package Identifier :

S17-0173-Single

Transistor Application :

SWITCHING

Number of Pins :

8