SI7141DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

6.25W

Pbfree Code :

yes

Vgs (Max) :

±20V

Case Connection :

DRAIN

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

6.25W Ta 104W Tc

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

-1V

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Mount :

Surface Mount

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Pin Count :

8

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-XDSO-C5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

-60A

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Fall Time (Typ) :

55 ns

Number of Pins :

8

Series :

TrenchFET®

Turn-Off Delay Time :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

14300pF @ 10V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

400nC @ 10V

Turn On Delay Time :

130 ns

Packaging :

Tape and Reel (TR)

Rise Time :

120ns

Number of Elements :

1

Resistance :

1.9mOhm

Radiation Hardening :

No

FET Type :

P-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Weight :

506.605978mg

Terminal Form :

C BEND