SI7139DP-T1-GE3

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Mfr.Part #
SI7139DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET P-CH 30V 40A PPAK SO-8
Stock
34,832
In Stock :
34,832

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
5W Ta 48W Tc
Power Dissipation :
5W
Transistor Element Material :
SILICON
Height :
1.17mm
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
5
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Peak Reflow Temperature (Cel) :
260
Transistor Application :
SWITCHING
Pbfree Code :
yes
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
40A
Weight :
506.605978mg
Input Capacitance (Ciss) (Max) @ Vds :
4230pF @ 15V
REACH SVHC :
Unknown
Pulsed Drain Current-Max (IDM) :
70A
JESD-30 Code :
R-XDSO-C5
Terminal Position :
Dual
Number of Elements :
1
Avalanche Energy Rating (Eas) :
45 mJ
JESD-609 Code :
e3
Continuous Drain Current (ID) :
-22.4A
Drain to Source Voltage (Vdss) :
30V
Number of Channels :
1
Max Junction Temperature (Tj) :
150°C
Pin Count :
8
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 15A, 10V
Radiation Hardening :
No
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
FET Type :
P-Channel
Vgs (Max) :
±20V
Turn On Delay Time :
17 ns
Threshold Voltage :
-1.2V
Mount :
Surface Mount
Number of Pins :
8
Package / Case :
PowerPAK® SO-8
Factory Lead Time :
14 Weeks
Time@Peak Reflow Temperature-Max (s) :
30
Contact Plating :
Tin
Manufacturer Package Identifier :
S17-0173-Single
Drain to Source Breakdown Voltage :
-30V
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Terminal Form :
C BEND
Operating Mode :
ENHANCEMENT MODE
Resistance :
5.5mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Published :
2013
Series :
TrenchFET®
Lead Free :
Lead Free
Turn-Off Delay Time :
56 ns
Datasheets
SI7139DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7139DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Number of Channels:1, Number of Pins:8, Package / Case:PowerPAK® SO-8, Mounting Type:Surface Mount, SI7139DP-T1-GE3 pinout, SI7139DP-T1-GE3 datasheet PDF, SI7139DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7139DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7139DP-T1-GE3


P-Channel Tape & Reel (TR) 5.5m Ω @ 15A, 10V ±20V 4230pF @ 15V 146nC @ 10V 30V PowerPAK® SO-8

SI7139DP-T1-GE3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 45 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4230pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -22.4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.40A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 56 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1.2V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI7139DP-T1-GE3 Features


the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of -22.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 70A.
a threshold voltage of -1.2V
a 30V drain to source voltage (Vdss)


SI7139DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7139DP-T1-GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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