SI7138DP-T1-E3
- Mfr.Part #
- SI7138DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A PPAK SO-8
- Stock
- 6,015
- In Stock :
- 6,015
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- Terminal Form :
- C BEND
- Turn-Off Delay Time :
- 50 ns
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 30V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 30A
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 135nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-XDSO-C5
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- PowerPAK® SO-8
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 19.7A, 10V
- Rise Time :
- 12ns
- Nominal Vgs :
- 2 V
- Avalanche Energy Rating (Eas) :
- 93 mJ
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 5.4W Ta 96W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Resistance :
- 7.8mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Power Dissipation :
- 5.4W
- Fall Time (Typ) :
- 8 ns
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- REACH SVHC :
- Unknown
- Transistor Application :
- SWITCHING
- Published :
- 2011
- Lead Free :
- Lead Free
- Datasheets
- SI7138DP-T1-E3
N-Channel Tape & Reel (TR) 7.8m Ω @ 19.7A, 10V ±20V 6900pF @ 30V 135nC @ 10V PowerPAK® SO-8
SI7138DP-T1-E3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 93 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6900pF @ 30V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
SI7138DP-T1-E3 Features
the avalanche energy rating (Eas) is 93 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
SI7138DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7138DP-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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