SI7137DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Number of Pins :

8

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-20V

Drain to Source Voltage (Vdss) :

20V

Height :

1.12mm

Terminal Form :

C BEND

Series :

TrenchFET®

Power Dissipation-Max :

6.25W Ta 104W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.15mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

110 ns

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

230 ns

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 10V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® SO-8

Rise Time :

150ns

Drain Current-Max (Abs) (ID) :

42A

JESD-30 Code :

R-XDSO-C5

JESD-609 Code :

e3

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

1.95m Ω @ 25A, 10V

Published :

2013

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.4V @ 250μA

REACH SVHC :

Unknown

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Number of Elements :

1

Pbfree Code :

yes

Pin Count :

8

Threshold Voltage :

-1.4V

Resistance :

1.95mOhm

Turn On Delay Time :

100 ns

FET Type :

P-Channel

Number of Channels :

1

Width :

5.15mm

Nominal Vgs :

-1.4 V

Case Connection :

DRAIN

Weight :

506.605978mg

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Gate Charge (Qg) (Max) @ Vgs :

585nC @ 10V

Mount :

Surface Mount

Continuous Drain Current (ID) :

-60A

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

6.25W

Gate to Source Voltage (Vgs) :

12V