SI7136DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

506.605978mg

Pulsed Drain Current-Max (IDM) :

70A

Input Capacitance (Ciss) (Max) @ Vds :

3380pF @ 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Pins :

8

ECCN Code :

EAR99

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 20A, 10V

Fall Time (Typ) :

9 ns

Pin Count :

8

Mounting Type :

Surface Mount

Number of Channels :

1

Terminal Form :

C BEND

Power Dissipation :

5W

Drain to Source Breakdown Voltage :

20V

Additional Feature :

ULTRA LOW-ON RESISTANCE

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

1V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Package / Case :

PowerPAK® SO-8

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

30A

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Mount :

Surface Mount

Nominal Vgs :

1 V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

45 mJ

Terminal Position :

Dual

Published :

2012

Drain Current-Max (Abs) (ID) :

29.5A

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Power Dissipation-Max :

5W Ta 39W Tc

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

30A Tc

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-XDSO-C5

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0032Ohm

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V