SI7136DP-T1-E3
- Mfr.Part #
- SI7136DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 30A PPAK SO-8
- Stock
- 1,177
- In Stock :
- 1,177
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 30A
- JESD-30 Code :
- R-XDSO-C5
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn-Off Delay Time :
- 37 ns
- Resistance :
- 3.2mOhm
- Turn On Delay Time :
- 19 ns
- Nominal Vgs :
- 1 V
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Length :
- 4.9mm
- Drain Current-Max (Abs) (ID) :
- 29.5A
- Series :
- TrenchFET®
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 42ns
- Weight :
- 506.605978mg
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 70A
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 20A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Width :
- 5.89mm
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3380pF @ 10V
- REACH SVHC :
- Unknown
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 5W Ta 39W Tc
- Fall Time (Typ) :
- 9 ns
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- C BEND
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Number of Terminations :
- 5
- Number of Pins :
- 8
- Package / Case :
- PowerPAK® SO-8
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2011
- Height :
- 1.04mm
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- SI7136DP-T1-E3
N-Channel Tape & Reel (TR) 3.2m Ω @ 20A, 10V ±20V 3380pF @ 10V 78nC @ 10V PowerPAK® SO-8
SI7136DP-T1-E3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 45 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3380pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 29.5A.As a result of its turn-off delay time, which is 37 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 70A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7136DP-T1-E3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 37 ns
based on its rated peak drain current 70A.
SI7136DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7136DP-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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