SI7129DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Fall Time (Typ) :

14 ns

Published :

2013

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Power Dissipation :

3.8W

Turn-Off Delay Time :

36 ns

Height :

1.04mm

Input Capacitance (Ciss) (Max) @ Vds :

3345pF @ 15V

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

PowerPAK® 1212-8

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Power Dissipation-Max :

3.8W Ta 52.1W Tc

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Operating Temperature :

-50°C~150°C TJ

Length :

3.05mm

Resistance :

11.4mOhm

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

14 Weeks

Number of Pins :

8

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

60A

JESD-30 Code :

S-XDSO-C5

Pin Count :

8

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

C BEND

Rise Time :

43ns

Drain Current-Max (Abs) (ID) :

35A

Rds On (Max) @ Id, Vgs :

11.4m Ω @ 14.4A, 10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Continuous Drain Current (ID) :

14.4A

ECCN Code :

EAR99

Turn On Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

JESD-609 Code :

e3

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Width :

3.05mm

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Case Connection :

DRAIN