SI7123DN-T1-GE3

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Mfr.Part #
SI7123DN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET P-CH 20V 10.2A PPAK1212-8
Stock
36,622
In Stock :
36,622

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
20V
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
10.6m Ω @ 15A, 4.5V
Power Dissipation-Max :
1.5W Ta
Published :
2013
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
40A
Series :
TrenchFET®
Drain to Source Breakdown Voltage :
-20V
Turn-Off Delay Time :
82 ns
Pin Count :
8
Radiation Hardening :
No
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Length :
3.3mm
Input Capacitance (Ciss) (Max) @ Vds :
3729pF @ 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±8V
Terminal Form :
C BEND
Continuous Drain Current (ID) :
-25A
Transistor Application :
SWITCHING
Rise Time :
88ns
Factory Lead Time :
12 Weeks
Peak Reflow Temperature (Cel) :
260
Resistance :
10.6mOhm
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 4.5V
Width :
3.3mm
Package / Case :
PowerPAK® 1212-8
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Number of Channels :
1
Pbfree Code :
yes
Mount :
Surface Mount
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Number of Terminations :
5
Power Dissipation :
1.5W
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
1V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
40
Gate to Source Voltage (Vgs) :
8V
FET Type :
P-Channel
Fall Time (Typ) :
88 ns
Turn On Delay Time :
25 ns
JESD-30 Code :
S-XDSO-C5
Threshold Voltage :
-1V
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
10.2A Ta
REACH SVHC :
Unknown
Height :
1.04mm
Terminal Position :
Dual
Transistor Element Material :
SILICON
Datasheets
SI7123DN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7123DN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:PowerPAK® 1212-8, Number of Channels:1, Number of Pins:8, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, SI7123DN-T1-GE3 pinout, SI7123DN-T1-GE3 datasheet PDF, SI7123DN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7123DN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7123DN-T1-GE3


P-Channel Tape & Reel (TR) 10.6m Ω @ 15A, 4.5V ±8V 3729pF @ 10V 90nC @ 4.5V 20V PowerPAK® 1212-8

SI7123DN-T1-GE3 Overview


A device's maximum input capacitance is 3729pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

SI7123DN-T1-GE3 Features


a continuous drain current (ID) of -25A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 40A.
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)


SI7123DN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7123DN-T1-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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