SI7121DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

15 ns

Vgs (Max) :

±25V

Power Dissipation :

3.7W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Temperature :

-50°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 15V

Peak Reflow Temperature (Cel) :

260

Width :

3.05mm

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Mount :

Surface Mount

Number of Terminations :

5

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

-16A

Case Connection :

DRAIN

Height :

1.04mm

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Rise Time :

100ns

Gate to Source Voltage (Vgs) :

25V

Published :

2012

REACH SVHC :

No SVHC

Turn On Delay Time :

44 ns

JESD-609 Code :

e3

Number of Elements :

1

Resistance :

18mOhm

Nominal Vgs :

-3 V

Power Dissipation-Max :

3.7W Ta 52W Tc

Lead Free :

Lead Free

Pin Count :

8

Avalanche Energy Rating (Eas) :

20 mJ

Radiation Hardening :

No

FET Type :

P-Channel

Turn-Off Delay Time :

28 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

S-XDSO-C5

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

18m Ω @ 10A, 10V

Package / Case :

PowerPAK® 1212-8

Factory Lead Time :

14 Weeks

Terminal Form :

C BEND

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Length :

3.05mm

Threshold Voltage :

-3V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

30V

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

50A

Number of Pins :

8

Number of Channels :

1

Termination :

SMD/SMT