SI7121ADN-T1-GE3
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- Mfr.Part #
- SI7121ADN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 12A PPAK1212-8
- Stock
- 2,981
- In Stock ：
- 2,981
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- -2.5V
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- REACH SVHC :
- Unknown
- Rise Time :
- 34ns
- Factory Lead Time :
- 14 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 8
- Element Configuration :
- Single
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 50A
- Drain to Source Voltage (Vdss) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Drain to Source Breakdown Voltage :
- -30V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1870pF @ 15V
- Turn On Delay Time :
- 38 ns
- JESD-30 Code :
- S-PDSO-F5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Published :
- 2011
- Continuous Drain Current (ID) :
- -18A
- Base Part Number :
- SI7121
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 25V
- Series :
- TrenchFET®
- Operating Temperature :
- -50°C~150°C TJ
- Vgs (Max) :
- ±25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- PowerPAK® 1212-8
- Turn-Off Delay Time :
- 24 ns
- Fall Time (Typ) :
- 10 ns
- Case Connection :
- DRAIN
- Resistance :
- 12.5mOhm
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 7A, 10V
- Power Dissipation-Max :
- 3.5W Ta 27.8W Tc
- Datasheets
- SI7121ADN-T1-GE3
P-Channel Tape & Reel (TR) 15m Ω @ 7A, 10V ±25V 1870pF @ 15V 50nC @ 10V 30V PowerPAK® 1212-8
SI7121ADN-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1870pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -18A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 50A.A turn-on delay time of 38 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -2.5V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI7121ADN-T1-GE3 Features
a continuous drain current (ID) of -18A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 50A.
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
SI7121ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7121ADN-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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