SI7120DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

12ns

Mount :

Surface Mount

Turn-Off Delay Time :

50 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Pin Count :

8

Pbfree Code :

yes

Number of Pins :

8

Lead Free :

Lead Free

Fall Time (Typ) :

12 ns

ECCN Code :

EAR99

Published :

2011

Resistance :

19mOhm

FET Type :

N-Channel

Series :

TrenchFET®

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Terminal Position :

Dual

Power Dissipation :

1.5W

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

19m Ω @ 10A, 10V

Max Power Dissipation :

1.5W

Continuous Drain Current (ID) :

10A

Min Operating Temperature :

-55°C

Package / Case :

PowerPAK® 1212-8

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

6.3A

Drain to Source Breakdown Voltage :

60V

Terminal Form :

C BEND

JESD-30 Code :

S-XDSO-C5

Avalanche Energy Rating (Eas) :

24 mJ

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

40A

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Peak Reflow Temperature (Cel) :

260