SI7120ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

50 ns

Mount :

Surface Mount

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Fall Time (Typ) :

12 ns

Avalanche Energy Rating (Eas) :

24 mJ

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.5W Ta

Number of Elements :

1

Threshold Voltage :

2.5V

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±20V

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Turn On Delay Time :

14 ns

Element Configuration :

Single

JESD-30 Code :

S-PDSO-C5

Gate to Source Voltage (Vgs) :

20V

Package / Case :

PowerPAK® 1212-8

Lead Free :

Lead Free

Power Dissipation :

1.5W

Case Connection :

DRAIN

Transistor Application :

SWITCHING

ECCN Code :

EAR99

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

6A

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

40A

Terminal Form :

C BEND

REACH SVHC :

No SVHC

Rise Time :

12ns

Terminal Position :

Dual

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

9.5A

Rds On (Max) @ Id, Vgs :

21m Ω @ 9.5A, 10V

Factory Lead Time :

14 Weeks

Terminal Finish :

PURE MATTE TIN

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes