SI7119DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.7W Ta 52W Tc

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

3.7W

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

5A

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Nominal Vgs :

-4 V

Terminal Finish :

Matte Tin (Sn)

Package / Case :

PowerPAK® 1212-8

Mount :

Surface Mount

Element Configuration :

Single

Number of Terminations :

5

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

S-XDSO-C5

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 1A, 10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-50°C~150°C TJ

Mounting Type :

Surface Mount

Radiation Hardening :

No

Threshold Voltage :

-4V

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

666pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-200V

Pin Count :

8

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Number of Channels :

1

Drain to Source Voltage (Vdss) :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-3.8A

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

Terminal Form :

C BEND

Published :

2013

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free