SI7119DN-T1-E3
- Mfr.Part #
- SI7119DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 3.8A PPAK1212-8
- Stock
- 6,393
- In Stock :
- 6,393
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- -3.8A
- Series :
- TrenchFET®
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Resistance :
- 1.05Ohm
- Element Configuration :
- Single
- Terminal Form :
- C BEND
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 666pF @ 50V
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 1.04mm
- Package / Case :
- PowerPAK® 1212-8
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.05 Ω @ 1A, 10V
- FET Type :
- P-Channel
- Drain to Source Breakdown Voltage :
- -200V
- JESD-30 Code :
- S-XDSO-C5
- Power Dissipation-Max :
- 3.7W Ta 52W Tc
- Fall Time (Typ) :
- 12 ns
- Drain to Source Voltage (Vdss) :
- 200V
- Turn-Off Delay Time :
- 27 ns
- Turn On Delay Time :
- 9 ns
- Factory Lead Time :
- 14 Weeks
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Power Dissipation :
- 3.7W
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 3.05mm
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Terminations :
- 5
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 11ns
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Width :
- 3.05mm
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -50°C~150°C TJ
- Published :
- 2013
- Pulsed Drain Current-Max (IDM) :
- 5A
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- SI7119DN-T1-E3
P-Channel Tape & Reel (TR) 1.05 Ω @ 1A, 10V ±20V 666pF @ 50V 25nC @ 10V 200V PowerPAK® 1212-8
SI7119DN-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 666pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -3.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -200V, and this device has a drainage-to-source breakdown voltage of -200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27 ns.Peak drain current is 5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SI7119DN-T1-E3 Features
a continuous drain current (ID) of -3.8A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 5A.
a 200V drain to source voltage (Vdss)
SI7119DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7119DN-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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