SI7117DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Width :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

2.17A Tc

Mounting Type :

Surface Mount

Resistance :

1.2Ohm

Mount :

Surface Mount

Case Connection :

DRAIN

Number of Pins :

8

Series :

TrenchFET®

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

150V

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 500mA, 10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Height :

1.04mm

Fall Time (Typ) :

11 ns

Terminal Form :

C BEND

Package / Case :

PowerPAK® 1212-8

Length :

3.05mm

Transistor Element Material :

SILICON

Number of Channels :

1

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

5

Power Dissipation :

3.2W

Transistor Application :

SWITCHING

Turn-Off Delay Time :

16 ns

Pbfree Code :

yes

Turn On Delay Time :

7 ns

Power Dissipation-Max :

3.2W Ta 12.5W Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-XDSO-C5

Rise Time :

11ns

Pulsed Drain Current-Max (IDM) :

2.2A

Published :

2016

Continuous Drain Current (ID) :

1.1A

FET Type :

P-Channel