SI7116DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

S-XDSO-C5

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

10.5A

Height :

1.04mm

Element Configuration :

Single

Published :

2015

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

40V

Rise Time :

10ns

Resistance :

7.8mOhm

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

1.5W Ta

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Drain to Source Voltage (Vdss) :

40V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 16.4A, 10V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Fall Time (Typ) :

10 ns

Number of Pins :

8

JESD-609 Code :

e3

Radiation Hardening :

No

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta

Vgs (Max) :

±20V

Width :

3.05mm

Length :

3.05mm

Number of Channels :

1

Terminal Form :

C BEND

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Series :

TrenchFET®

Power Dissipation :

1.5W

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® 1212-8

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lead Free :

Lead Free

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

36 ns